DMBT4124 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for general purpose switching and amplifier applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30) .067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .089(0.25) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) max .027(0.67) .013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo 30 v collector-emitter voltage vceo 25 v emitter-base voltage vebo 5 v collector current ic 200 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 30 - - v ic=10ma, ie=0 collector-emitter breakdown voltage bvceo 25 - - v ic=1ma, ib=0 emitter-base breakdown volatge bvebo 5 - - v ie=10ma, ic=0 collector cutoff current icbo - - 50 na vcb=20v emitter cutoff current iebo - - 50 na veb=3v collector-emitter saturation voltage (1) vce(sat) - - 0.3 v ic=50ma, ib=5ma base-emitter saturation voltage (1) vbe(sat) - - 0.95 v ic=50ma, ib=5ma dc current gain(1) hfe1 120 - 360 - ic=2ma, vce=1v hfe2 60 - - - ic=50ma, vce=1v transition frequency ft 300 - - mhz ic=10ma, vce =20v, f=1mhz output capacitance cob - - 4 pf vcb =5v, f=1mhz, ie=0 electrical characteristics (ratings at 25oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
|
